The influence of structural properties on conductivity and luminescence of MBE grown InN

P. Specht, R. Armitage, J. Ho, E. Gunawan, Q. Yang, X. Xu, C. Kisielowski, E. R. Weber

研究成果: Contribution to journalConference article査読

37 被引用数 (Scopus)

抄録

Within the last few years indium nitride (InN) gained substantial interest due to its controversially discussed apparent band gap and its predicted highest maximum electron mobility among several III-V compounds, including Al(Ga)N and GaAs. The band gap of epitaxial InN has been recently reported to be around 0.7eV rather than the previously accepted value of 1.9eV obtained from polycrystalline films. Thus, InN could be a promising material for applications in infrared opto-electronics or high-speed electronics. However, the structural quality of the InN epilayers is still inferior to GaN and needs to be improved. Also, the role of many contaminants in InN and their effect on the epilayer's conductivity and/or luminescence properties is still under investigation. This work describes recent studies of InN growth by molecular beam epitaxy on sapphire (0001) substrates. The effect of buffer layer variations including a prior substrate nitridation step is discussed. Structural properties (X-ray diffraction, AFM and TEM images) and chemical profiles (SIMS) will be correlated to Hall data and Photo-luminescence spectra. The role of oxygen and hydrogen as possible donors in InN will be discussed.

本文言語英語
ページ(範囲)111-118
ページ数8
ジャーナルJournal of Crystal Growth
269
1
DOI
出版ステータス出版済み - 8 15 2004
外部発表はい
イベントProceedings of the First ONR International Indium Nitride Work - Fremantle, オーストラリア
継続期間: 11 16 200311 20 2003

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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