The optimal profile design for SJ-MOSFET fabricated by double-ion- implantation and multi-epitaxial method

Syotaro Ono, Wataru Saito, Masaru Izumisawa, Yasuto Sumi, Shoichiro Kurushima, Masataka Tsuji, Ken'ichi Tokano, Masakazu Yamaguchi

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 引用 (Scopus)

抜粋

We investigated the profile dependency of specific on-resistance (R onA) under high-temperature and high-current-density conditions for 600V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for the first time. The column doping profile is an important design parameter for the RonA characteristics because the profile affects the electron mobility (μe) in the drift region. The n-column profile was modulated by the column diffusion time (t diff) in this experiment. The optimal tdiff achieved minimal RonA under the high-temperature and high-current-density conditions.

元の言語英語
ホスト出版物のタイトルISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's
ページ161-164
ページ数4
DOI
出版物ステータス出版済み - 9 17 2008
外部発表Yes
イベントISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's - Orlando, FL, 米国
継続期間: 5 18 20085 22 2008

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN(印刷物)1063-6854

会議

会議ISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's
米国
Orlando, FL
期間5/18/085/22/08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • これを引用

    Ono, S., Saito, W., Izumisawa, M., Sumi, Y., Kurushima, S., Tsuji, M., Tokano, K., & Yamaguchi, M. (2008). The optimal profile design for SJ-MOSFET fabricated by double-ion- implantation and multi-epitaxial method. : ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's (pp. 161-164). [4538923] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2008.4538923