The Role of Zn Substitution in Improving the Electrical Properties of CuI Thin Films and Optoelectronic Performance of CuI MSM Photodetectors

Chien Yie Tsay, Yun Chi Chen, Hsuan Meng Tsai, Phongsaphak Sittimart, Tsuyoshi Yoshitake

研究成果: ジャーナルへの寄稿学術誌査読

1 被引用数 (Scopus)

抄録

Pure CuI and Zn-substituted CuI (CuI:Zn) semiconductor thin films, and metal-semiconductor-metal (MSM) photodetectors were fabricated on glass substrates by a low-temperature solution process. The influence of Zn substitution concentration (0–12 at%) on the microstructural, optical, and electrical characteristics of CuI thin films and its role in improving the optoelectronic performance of CuI MSM photodetectors were investigated in this study. Incorporation of Zn cation dopant into CuI thin films improved the crystallinity and increased the average crystalline size. XPS analysis revealed that the oxidation state of Cu ions in all the CuI-based thin films was +1, and the estimated values of [Cu]/[I] for the CuI:Zn thin films were lower than 0.9. It was found that the native p-type conductivity of polycrystalline CuI thin film was converted to n-type conductivity after the incorporation of Zn ions into CuI nanocrystals, and the electrical resistivity decreased with increases in Zn concentration. A time-resolved photocurrent study indicated that the improvements in the optoelectronic performance of CuI MSM photodetectors were obtained through the substitution of Zn ions, which provided operational stability to the two-terminal optoelectronic device. The 8 at% Zn-substituted CuI photodetectors exhibited the highest response current, responsivity, and EQE, as well as moderate specific detectivity.

本文言語英語
論文番号8145
ジャーナルMaterials
15
22
DOI
出版ステータス出版済み - 11月 2022

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学

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