The roles of ambient oxygen and substrate temperature on growth of diamond thin films by pulsed laser deposition

Tsuyoshi Yoshitake, Takashi Nishiyama, Takeshi Hara, Kunihito Nagayama

研究成果: ジャーナルへの寄稿学術誌査読

3 被引用数 (Scopus)

抄録

Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The suitable oxygen atmosphere of 5×10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 650°C, single-phase diamond films consisting of diamond crystal with diameters of 1 - 5 μm could be grown. The results demonstrated that the diamond thin films can be grown homoepitaxially using PLD by controlling the deposition parameters, such as the oxygen pressure and the substrate temperature.

本文言語英語
ページ(範囲)825-829
ページ数5
ジャーナルInternational Journal of Modern Physics B
16
6-7
DOI
出版ステータス出版済み - 3月 20 2002

!!!All Science Journal Classification (ASJC) codes

  • 統計物理学および非線形物理学
  • 凝縮系物理学

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