We performed thermodynamic analyses to calculate the relationship between the input indium molar ratio and solid composition of a coherently grown InGaN thin film that is subjected compressive or tensile stress. The theoretical approach incorporates energy loss of a thin film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InGaN is lower than that of stress-free InGaN. This represents the composition pulling effect. We also studied stable growth modes under various growth conditions. The results suggest the importance of control of partial pressure of NH3 to optimize growth conditions of InGaN with a unique composition.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版ステータス||出版済み - 2010|
|イベント||8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, 大韓民国|
継続期間: 10 18 2009 → 10 23 2009
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics