Theoretical approach to structural stability of GaN: How to grow cubic GaN

Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto

研究成果: Contribution to journalArticle査読

13 被引用数 (Scopus)

抄録

We investigated the growth conditions of cubic GaN (c-GaN) by ab initio-based approach which incorporates free energy of vapor phase. It is known that a c-GaN is a metastable phase and wurtzite GaN (h-GaN), which is a stable phase of GaN, is easily incorporated in the c-GaN crystal during growth. h-GaN is formed in the area grown on {1 1 1} faceted surface. In the present study, therefore, we studied the growth conditions of {1 1 1} facet formation in order to suppress h-GaN mixing. The results suggest that we can suppress the {1 1 1} facet formation, i.e., h-GaN mixing, by controlling the growth conditions such as temperature and gallium beam equivalent pressure.

本文言語英語
ページ(範囲)3106-3109
ページ数4
ジャーナルJournal of Crystal Growth
311
10
DOI
出版ステータス出版済み - 5 1 2009

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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