Theoretical approach to the rate of response of semiconductor gas sensor

Noboru Yamazoe, Kengo Shimanoe

研究成果: Contribution to journalArticle査読

32 被引用数 (Scopus)

抄録

The rate of response of a semiconductor gas sensor to a change in the partial pressure of O2, H2 or NO2 has been successfully formulated theoretically under the assumptions of volume depletion and a specific scheme of electron transfer (modified model). In each case, the rate is expressed as a logarithmic function of reduced resistance and its rate constant (reciprocal of time constant) is given by a combination of three terms, which reflect the rate of surface reactions, the donor density and the size of constituent crystals, respectively. Especially remarkable is the last term which leads to strong attenuations of the rate of response for the crystals with reduced size (n) exceeding 5 (spheres) or 3 (plates).

本文言語英語
ページ(範囲)132-140
ページ数9
ジャーナルSensors and Actuators, B: Chemical
150
1
DOI
出版ステータス出版済み - 10 21 2010

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 器械工学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 金属および合金
  • 電子工学および電気工学
  • 材料化学

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