Theoretical investigation of arsenic desorption from GaAs(001) surfaces under an atmosphere of hydrogen

Yuriko Matsuo, Yoshihiro Kangawa, Yoshinao Kumagai, Toshiharu Irisawa, Akinori Koukitu

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

We investigate the desorption of As from GaAs(001) surfaces under an atmosphere of hydrogen using the ab initio pseudopotential method. The GaAs surface is (2 × 4) reconstructed with arsenic-monohydrogen bonds, arsenic-dihydrogen bonds, and Ga-Ga dimer bonds. We propose a mechanism for As desorption from the (001) surface in the presence of ambient hydrogen. The calculated activation energy is close to the experimental value for the (1 × 1) to (2 × 4) transition according to an in situ gravimetric (GM) method.

本文言語英語
ページ(範囲)2578-2581
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
5 A
DOI
出版ステータス出版済み - 5 2003
外部発表はい

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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