Theoretical investigation of the effect of growth orientation on indium incorporation efficiency during InGaN thin film growth by metal-organic vapor phase epitaxy

研究成果: Contribution to journalArticle査読

15 被引用数 (Scopus)

抄録

The effect of growth orientation on In incorporation efficiency in InGaN films grown by metal-organic vapor phase epitaxy (MOVPE) is theoretically investigated. We propose a new theoretical model that explains the role of the surface N-H layer in In incorporation based on first-principles calculations. During III-nitride MOVPE, N-terminated reconstruction with N dangling bonds passivated by H is stable. A surface N-H layer that covers a group-III (In, Ga) atomic layer prevents In atoms from desorbing and being replaced by Ga atoms. In incorporation is therefore more efficient for higher N-H layer coverage and stability. To investigate this relationship, the enthalpy change for the decomposition of a N-H layer was calculated. This enthalpy change which depends on growth orientations is in good agreement with the experimental In content.

本文言語英語
論文番号08JC02
ジャーナルJapanese journal of applied physics
52
8 PART 2
DOI
出版ステータス出版済み - 8 2013

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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