Theoretical investigations of adatom adsorptions on the As-stabilized GaAs(1 1 1)A surface

A. Taguchi, K. Shiraishi, T. Ito, Y. Kangawa

研究成果: Contribution to journalArticle査読

5 被引用数 (Scopus)

抄録

We investigated adsorptions of Ga and As atoms on the As-stabilized GaAs(1 1 1)A surface by using first-principles calculations. We found that a single As adatom does not occupy the As lattice site on the surface, but the As lattice site becomes active for an As adatom when the As adatom couples with Ga adatoms. This finding indicates that Ga has a self-surfactant effect on the As-stabilized surface. We also found that adatoms do not form stable microstructures on the As-stabilized surface. This is consistent with the reported experimental results that the layer-by-layer growth is difficult. We discuss epitaxial growth processes based on the calculation results.

本文言語英語
ページ(範囲)173-177
ページ数5
ジャーナルSurface Science
493
1-3
DOI
出版ステータス出版済み - 11 1 2001
外部発表はい

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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