Theoretical investigations of thermodynamic stability for Si1-x-yGexCy

Tomonori Ito, Yoshihiro Kangawa

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

Thermodynamic stability of Si1-x-yGexCy solid solutions is systematically investigated by excess energy calculations based on empirical interatomic potentials. The calculated excess energies for disordered Si1-x-yGexCy have positive values over the entire concentration range. This implies that Si1-x-yGexCy with a random distribution of Si, Ge and C is thermodynamically unstable at 0 K. The excess energies of Si1-x-yGexCy with sublattice ordering are also calculated. The calculated results imply that the ordered atomic arrangements reduce the excess energies and promote C incorporation in Si1-x-yGexCy because of increase of Si-C interatomic bonds. Furthermore, the excess energies of Si1-x-yGexCy increase with Ge content x when C content y remains constant; this is because an increase of Ge content introduces a large strain energy in Si1-x-yGexCy. This gives one possible explanation for experimental findings where by the existence of Ge atoms prevents C incorporation in Si1-x-yGexCy growth.

本文言語英語
ページ(範囲)116-120
ページ数5
ジャーナルJournal of Crystal Growth
237-239
1 4I
DOI
出版ステータス出版済み - 4 2002
外部発表はい

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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