Theoretical limits of superjunction considering with charge imbalance margin

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

13 引用 (Scopus)

抜粋

This paper reports that the theoretical limit of the superjunction (SJ) structure is discussed with considering the charge imbalance margin. The SJ structure is attractive to reduce the specific on-resistance dramatically due to the charge compensation concept. The breakdown voltage, however, is lowered by the charge imbalance between n- and p-columns due to the electric field modulation. The analytical models of the theoretical on-resistance limit considered with the charge imbalance margin were provided in this work. The analytical results showed that the on-resistance reduction required not only lateral pitch narrowing but also the charge imbalance margin cut. This tendency can be confirmed from the experimental results in the previous works. The theoretical limit was estimated to be 7 mΩcm2 for 600 V-class SJ-MOS with the charge imbalance margin of 3%.

元の言語英語
ホスト出版物のタイトル2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
出版者Institute of Electrical and Electronics Engineers Inc.
ページ125-128
ページ数4
ISBN(電子版)9781479962594
DOI
出版物ステータス出版済み - 6 12 2015
外部発表Yes
イベント27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 - Hong Kong, 中国
継続期間: 5 10 20155 14 2015

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2015-June
ISSN(印刷物)1063-6854

その他

その他27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
中国
Hong Kong
期間5/10/155/14/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • これを引用

    Saito, W. (2015). Theoretical limits of superjunction considering with charge imbalance margin. : 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 (pp. 125-128). [7123405] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; 巻数 2015-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2015.7123405