Theoretical study of the ground and excited states of silicon clusters

Si8Hx

Keizo Nakajima, Kazunari Yoshizawa, Tokio Yamabe

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

抄録

The electronic structures of small silicon clusters in the ground and excited states have been studied based on ab initio configuration interaction by the single-substitutions approximation method. We consider Si8Hx clusters of chain, branch, ladder, and cubic types as model compounds, due to their variety of molecular structures. Calculated Stokes shifts and oscillator strengths successfully reproduce the experimental electronic spectrum. These phenomena are well explained by the detailed analysis of the orbital patterns and energy level changes related to the excitation. The optical properties of the cubic Si cluster are considerably different from those of the other Si8 clusters. It shows zero oscillator strength, i.e., "forbidden transition," from the first to 20th excited states because of its high symmetry.

元の言語英語
ページ(範囲)4340-4346
ページ数7
ジャーナルJournal of Applied Physics
88
発行部数7
DOI
出版物ステータス出版済み - 10 1 2000
外部発表Yes

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ground state
silicon
oscillator strengths
excitation
forbidden transitions
ladders
electronic spectra
configuration interaction
molecular structure
energy levels
substitutes
electronic structure
optical properties
orbitals
shift
symmetry
approximation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Theoretical study of the ground and excited states of silicon clusters : Si8Hx. / Nakajima, Keizo; Yoshizawa, Kazunari; Yamabe, Tokio.

:: Journal of Applied Physics, 巻 88, 番号 7, 01.10.2000, p. 4340-4346.

研究成果: ジャーナルへの寄稿記事

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