Theory of power laws for semiconductor gas sensors

Noboru Yamazoe, Kengo Shimanoe

研究成果: ジャーナルへの寄稿記事

388 引用 (Scopus)

抄録

It has long been known empirically that the electric resistance of a semiconductor gas sensor under exposure to a target gas (partial pressure P) is proportional to Pn where n is a constant fairly specific to the kind of target gas (power law). This paper aims at providing a theoretical basis to such power laws. It is shown that the laws can be derived by combining a depletion theory of semiconductor, which deals with the distribution of electrons between surface state (surface charge) and bulk, with the dynamics of adsorption and/or reactions of gases on the surface, which is responsible for accumulation or reduction of surface charges. The resulting laws describe well sensor response behavior to oxygen, reducing gases and oxidizing gases.

元の言語英語
ページ(範囲)566-573
ページ数8
ジャーナルSensors and Actuators, B: Chemical
128
発行部数2
DOI
出版物ステータス出版済み - 1 15 2008

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Chemical sensors
Gases
Semiconductor materials
sensors
gases
Surface charge
Surface states
Partial pressure
gas pressure
partial pressure
depletion
Oxygen
Adsorption
adsorption
Electrons
Sensors
oxygen
electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry
  • Electrical and Electronic Engineering

これを引用

Theory of power laws for semiconductor gas sensors. / Yamazoe, Noboru; Shimanoe, Kengo.

:: Sensors and Actuators, B: Chemical, 巻 128, 番号 2, 15.01.2008, p. 566-573.

研究成果: ジャーナルへの寄稿記事

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