Thermal conductivity of SiC calculated by molecular dynamics

Takahiro Kawamura, Daisuke Hori, Yoshihiro Kangawa, Koichi Kakimoto, Masashi Yoshimura, Yusuke Mori

研究成果: ジャーナルへの寄稿学術誌査読

29 被引用数 (Scopus)

抄録

We calculated the thermal conductivity of SiC by molecular dynamics simulation and investigated the effects of impurities on the thermal conductivity of SiC. We used Tersoff potential to express the structure of a SiC crystal. Thermal conductivity was obtained using Green-Kubo's equation. The results show that the thermal conductivities of perfect 2H-, 3C-, 4H-, and 6H-SiC polytypes were in the range of 260 to 420 W/(m·K) and that the thermal conductivity of 3C-SiC was the largest among the polytypes. The thermal conductivities of 4H-SiC decreased with an increase in impurity concentration above 1.0 × 1017 to 1.0 × 1018 1/cm 3.

本文言語英語
ページ(範囲)8898-8901
ページ数4
ジャーナルJapanese journal of applied physics
47
12
DOI
出版ステータス出版済み - 12月 19 2008

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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