Thermal expansion and electrical resistivity of EuNi2(Si1-xGex)2

Hirofumi Wada, Tomonori Sakata, Akihiro Nakamura, Akihiro Mitsuda, Masayuki Shiga, Yasunori Ikeda, Yoshichika Bando

研究成果: Contribution to journalArticle査読

17 被引用数 (Scopus)

抄録

The thermal expansion and temperature dependence of electrical resistivity were measured for EuNi2(Si1-xGex)2, which shows a valence transition against temperature in 0.5≤x≤0.82. A first-order phase transition was observed in the temperature dependence of the lattice parameters of x = 0.79 and 0.82, while the lattice parameters vary continuously with temperature for x≤0.70. The temperature dependence of electrical resistivity shows a peak at the valence transition temperature. The origin of the peak is discussed on the basis of the dynamic alloy model.

本文言語英語
ページ(範囲)950-953
ページ数4
ジャーナルJournal of the Physical Society of Japan
68
3
DOI
出版ステータス出版済み - 1 1 1999
外部発表はい

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

フィンガープリント 「Thermal expansion and electrical resistivity of EuNi<sub>2</sub>(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>2</sub>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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