Thermal Oxidation of GaP

Y. Kato, K. M. Geib, R. G. Gann, P. R. Brusenback, C. W. Wilmsen

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

The surface topography and interface structure after thermal oxidation of GaP is reported for the temperature range 600 to 1220 °C. An extensive network of interfacial voids was observed in the substrate under the oxide film. The size of the voids was enlarged by a bulging of the oxide, probably as a result of pressure within the voids but also from a difference in the coefficients of expansion which also caused cracks in the oxide film. The voids begin as isolated cavities but coalesce into winding caverns after further oxidation or with increased temperature. The oxide begins to grow a significant thickness of oxide at approximately 650 °C in dry oxygen. In steam the oxidation rate is approximately ten times faster and there are no interfacial voids even after 2 μ of oxide growth.

本文言語英語
ページ(範囲)588-592
ページ数5
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
2
2
DOI
出版ステータス出版済み - 4 1984
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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