Thermal stability of B in poly-SiGe on SiON

T. Sadoh, Fitrianto, M. Kunigami, A. Kenjo, A. Miyauchi, H. Inoue, M. Miyao

研究成果: Contribution to journalArticle査読

抄録

Thermal stability of B atoms in in situ doped poly-SiGe films has been investigated. After annealing at 600-900 °C, the carrier concentration in the films decreased with increasing annealing time, which was due to transition from the super-saturated concentration of B for as-deposited films to the solid solubility at the annealing temperature. Thermal stability of B atoms was significantly improved by Ge doping, e.g. the stability in poly-Si0.6Ge0.4 films was four times as high as that in poly-Si films. The deactivation process of B atoms could be separated into the fast and slow processes. The time constants for both processes did not depend on the Ge fraction, while the ratio of deactivated B atoms in the fast process to those in the slow process decreased by Ge doping. The two-state model has been proposed, and explained the improved thermal stability of B atoms by Ge doping.

本文言語英語
ページ(範囲)129-132
ページ数4
ジャーナルMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
89
1-3
DOI
出版ステータス出版済み - 2 14 2002

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Thermal stability of B in poly-SiGe on SiON」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル