Thermal study of a silylmethylated fullerene leading to preparation of its vacuum deposited thin films

Hideo Nagashima, Yoshiyuki Kato, Hirohisa Satoh, Naoki Kamegashima, Kenji Itoh, Oi Kazuhiro, Yahachi Saito

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

Thermal study of a C60 derivative containing a siloxane structure revealed that it was unstable above 350 deg;C. A major decomposition pathway was formation of C60 and (Me3Si)2O presumably via homolysis of bonds between the α-carbon of the silyl group and the cage carbon. By careful control of the crucible temperature below 350 °C, amorphous vapor-deposited thin films on NaCl or mica were successfully prepared.

本文言語英語
ページ(範囲)519-520
ページ数2
ジャーナルChemistry Letters
7
DOI
出版ステータス出版済み - 1 1 1996
外部発表はい

All Science Journal Classification (ASJC) codes

  • Chemistry(all)

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