Thermally stable operation of h-terminated diamond FETs by NO 2 adsorption and Al 2O 3 passivation

Kazuyuki Hirama, Hisashi Sato, Yuichi Harada, Hideki Yamamoto, Makoto Kasu

研究成果: ジャーナルへの寄稿記事

35 引用 (Scopus)

抄録

Using the NO 2 adsorption and Al 2O 3 passivation technique, we improved the thermal stability of hydrogen-terminated diamond field-effect transistors (FETs) and then demonstrated stable operation at 200 °C in a vacuum for the first time. At 200 °C, the drain current I DS of a passivated diamond FET remained constant for at least more than 2 h. No degradation of FET characteristics was observed after the 200 °C heating cycle. Furthermore, a passivated diamond FET with a gate length of 0.2 μm showed high maximum I DS of-1000 mA/mm and an RF output power density of 2 W/mm.

元の言語英語
記事番号6230604
ページ(範囲)1111-1113
ページ数3
ジャーナルIEEE Electron Device Letters
33
発行部数8
DOI
出版物ステータス出版済み - 7 9 2012
外部発表Yes

Fingerprint

Diamond
Field effect transistors
Passivation
Diamonds
Adsorption
Drain current
Hydrogen
Thermodynamic stability
Vacuum
Heating
Degradation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

これを引用

Thermally stable operation of h-terminated diamond FETs by NO 2 adsorption and Al 2O 3 passivation. / Hirama, Kazuyuki; Sato, Hisashi; Harada, Yuichi; Yamamoto, Hideki; Kasu, Makoto.

:: IEEE Electron Device Letters, 巻 33, 番号 8, 6230604, 09.07.2012, p. 1111-1113.

研究成果: ジャーナルへの寄稿記事

Hirama, Kazuyuki ; Sato, Hisashi ; Harada, Yuichi ; Yamamoto, Hideki ; Kasu, Makoto. / Thermally stable operation of h-terminated diamond FETs by NO 2 adsorption and Al 2O 3 passivation. :: IEEE Electron Device Letters. 2012 ; 巻 33, 番号 8. pp. 1111-1113.
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