Thermodynamic analysis of (0001) and (0001) GaN metalorganic vapor phase epitaxy

Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Hubert Valencia, Kenji Shiraishi, Yoshinao Kumagai, Koichi Kakimoto, Akinori Koukitu

研究成果: ジャーナルへの寄稿記事

16 引用 (Scopus)

抜粋

We performed a thermodynamic analysis of GaN metalorganic vapor phase epitaxy considering the (0001) and (0001) surface states. Surface reconstruction, which depends on growth conditions such as temperature and partial pressure, affects growth processes. To discuss the effects of surface states on growth processes, we investigated the driving force of precursor deposition to form the surface phase defined stoichiometrically. In both N2 and H2 carrier gas cases, we showed surface phase diagrams, calculated driving forces, and discussed the difference in growth orientation.

元の言語英語
記事番号070304
ジャーナルJapanese Journal of Applied Physics
56
発行部数7
DOI
出版物ステータス出版済み - 7 2017

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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