TY - JOUR
T1 - Thermodynamic analysis of InN and InxGa1-xN MOVPE using various nitrogen sources
AU - Kumagai, Yoshinao
AU - Kikuchi, Jun
AU - Matsuo, Yuriko
AU - Kangawa, Yoshihiro
AU - Tanaka, Ken
AU - Koukitu, Akinori
N1 - Funding Information:
This work was partly carried out under the 21st Century Center of Excellence (COE) program of the Future Nano-Materials Research and Education Project at the Tokyo University of Agriculture and Technology, which is financially supported by the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2004/12/10
Y1 - 2004/12/10
N2 - The growth of InN and InxGa1-xN by metalorganic vapor-phase epitaxy (MOVPE) using ammonia (NH3), hydrazine (N 2H4), monomethylhydrazine (MMHy), 1,1-dimethylhydrazine (1,1-DMHy) and 1,2-DMHy as nitrogen sources is examined by thermodynamic analysis. The equilibrium partial pressures of gaseous species are calculated for various deposition conditions in order to determine the deposition mode, etching conditions, In droplet formation and growth, and solid composition of the grown InxGa1-xN. In contrast to the NH3 system, the use of N2H4, MMHy, 1,1-DMHy or 1,2-DMHy allows InN growth over a wide range of input V/III ratios. Also shown is that the compositionunstable growth of InxGa1-xN that occurs in the NH3 system is not observed in the N2H4, MMHy, 1,1-DMHy and 1,2-DMHy systems.
AB - The growth of InN and InxGa1-xN by metalorganic vapor-phase epitaxy (MOVPE) using ammonia (NH3), hydrazine (N 2H4), monomethylhydrazine (MMHy), 1,1-dimethylhydrazine (1,1-DMHy) and 1,2-DMHy as nitrogen sources is examined by thermodynamic analysis. The equilibrium partial pressures of gaseous species are calculated for various deposition conditions in order to determine the deposition mode, etching conditions, In droplet formation and growth, and solid composition of the grown InxGa1-xN. In contrast to the NH3 system, the use of N2H4, MMHy, 1,1-DMHy or 1,2-DMHy allows InN growth over a wide range of input V/III ratios. Also shown is that the compositionunstable growth of InxGa1-xN that occurs in the NH3 system is not observed in the N2H4, MMHy, 1,1-DMHy and 1,2-DMHy systems.
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U2 - 10.1016/j.jcrysgro.2004.08.090
DO - 10.1016/j.jcrysgro.2004.08.090
M3 - Article
AN - SCOPUS:9944265662
SN - 0022-0248
VL - 272
SP - 341
EP - 347
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4 SPEC. ISS.
ER -