Thermodynamic analysis of InN and InxGa1-xN MOVPE using various nitrogen sources

Yoshinao Kumagai, Jun Kikuchi, Yuriko Matsuo, Yoshihiro Kangawa, Ken Tanaka, Akinori Koukitu

研究成果: Contribution to journalArticle査読

19 被引用数 (Scopus)

抄録

The growth of InN and InxGa1-xN by metalorganic vapor-phase epitaxy (MOVPE) using ammonia (NH3), hydrazine (N 2H4), monomethylhydrazine (MMHy), 1,1-dimethylhydrazine (1,1-DMHy) and 1,2-DMHy as nitrogen sources is examined by thermodynamic analysis. The equilibrium partial pressures of gaseous species are calculated for various deposition conditions in order to determine the deposition mode, etching conditions, In droplet formation and growth, and solid composition of the grown InxGa1-xN. In contrast to the NH3 system, the use of N2H4, MMHy, 1,1-DMHy or 1,2-DMHy allows InN growth over a wide range of input V/III ratios. Also shown is that the compositionunstable growth of InxGa1-xN that occurs in the NH3 system is not observed in the N2H4, MMHy, 1,1-DMHy and 1,2-DMHy systems.

本文言語英語
ページ(範囲)341-347
ページ数7
ジャーナルJournal of Crystal Growth
272
1-4 SPEC. ISS.
DOI
出版ステータス出版済み - 12 10 2004
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

フィンガープリント

「Thermodynamic analysis of InN and In<sub>x</sub>Ga<sub>1-x</sub>N MOVPE using various nitrogen sources」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル