The growth of InN and InxGa1-xN by metalorganic vapor-phase epitaxy (MOVPE) using ammonia (NH3), hydrazine (N 2H4), monomethylhydrazine (MMHy), 1,1-dimethylhydrazine (1,1-DMHy) and 1,2-DMHy as nitrogen sources is examined by thermodynamic analysis. The equilibrium partial pressures of gaseous species are calculated for various deposition conditions in order to determine the deposition mode, etching conditions, In droplet formation and growth, and solid composition of the grown InxGa1-xN. In contrast to the NH3 system, the use of N2H4, MMHy, 1,1-DMHy or 1,2-DMHy allows InN growth over a wide range of input V/III ratios. Also shown is that the compositionunstable growth of InxGa1-xN that occurs in the NH3 system is not observed in the N2H4, MMHy, 1,1-DMHy and 1,2-DMHy systems.
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