Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

Tomoya Kimura, Kazuki Ohnishi, Yuki Amano, Naoki Fujimoto, Masaaki Araidai, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Kangawa, Kenji Shiraishi

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

The halide vapor phase epitaxy (HVPE) of Mg-doped GaN using solid MgO is investigated. Thermodynamic analysis of the reactions amongst MgO, HCl and N2 is performed based on first-principles calculations. It is found that the equilibrium partial pressure of MgCl2 is the highest amongst magnesium related molecules at 900 °C. By increasing the input partial pressure of HCl, the pressure of MgCl2 is increased, which agrees well with recently reported experiments. From these results, it is concluded that MgCl2 is the key molecule which plays the most important role for Mg-doping in fabricating p-type GaN using HVPE with MgO.

本文言語英語
論文番号088001
ジャーナルJapanese journal of applied physics
59
8
DOI
出版ステータス出版済み - 8 1 2020

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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