抄録
In this paper, we use thermodynamic analysis to determine how the nitrogen (N) ratio in the source gases affects the solid composition of coherently grown GaAs1-xNx(x∼0.03). The source gases for Ga, As, and N are trimethylgallium ((CH3)3Ga), arsine (AsH3), and ammonia (NH3), respectively. The growth occurs on a Ge substrate, and the analysis includes the stress from the substratecrystal lattice mismatch. Calculation results indicate that to have just a few percent N incorporation into the grown solid, the V/III ratio in the source gases should be several thousands and the input-gas partial-pressure ratio NH 3/(NH3AsH3) should exceed 0.99. We also find that the lattice mismatch stress from the Ge substrate increases the V/III sourcegas ratio required for stable growth, whereas an increase in input Ga partial pressure ratio has the opposite effect.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 105-109 |
| ページ数 | 5 |
| ジャーナル | Journal of Crystal Growth |
| 巻 | 343 |
| 発行部数 | 1 |
| DOI | |
| 出版物ステータス | 出版済み - 3 15 2012 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
これを引用
Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge. / Jun, Kawano; Yoshihiro, K.; Tomonori, Ito; Koichi, Kakimoto; Akinori, Koukitu.
：: Journal of Crystal Growth, 巻 343, 番号 1, 15.03.2012, p. 105-109.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge
AU - Jun, Kawano
AU - Yoshihiro, K.
AU - Tomonori, Ito
AU - Koichi, Kakimoto
AU - Akinori, Koukitu
PY - 2012/3/15
Y1 - 2012/3/15
N2 - In this paper, we use thermodynamic analysis to determine how the nitrogen (N) ratio in the source gases affects the solid composition of coherently grown GaAs1-xNx(x∼0.03). The source gases for Ga, As, and N are trimethylgallium ((CH3)3Ga), arsine (AsH3), and ammonia (NH3), respectively. The growth occurs on a Ge substrate, and the analysis includes the stress from the substratecrystal lattice mismatch. Calculation results indicate that to have just a few percent N incorporation into the grown solid, the V/III ratio in the source gases should be several thousands and the input-gas partial-pressure ratio NH 3/(NH3AsH3) should exceed 0.99. We also find that the lattice mismatch stress from the Ge substrate increases the V/III sourcegas ratio required for stable growth, whereas an increase in input Ga partial pressure ratio has the opposite effect.
AB - In this paper, we use thermodynamic analysis to determine how the nitrogen (N) ratio in the source gases affects the solid composition of coherently grown GaAs1-xNx(x∼0.03). The source gases for Ga, As, and N are trimethylgallium ((CH3)3Ga), arsine (AsH3), and ammonia (NH3), respectively. The growth occurs on a Ge substrate, and the analysis includes the stress from the substratecrystal lattice mismatch. Calculation results indicate that to have just a few percent N incorporation into the grown solid, the V/III ratio in the source gases should be several thousands and the input-gas partial-pressure ratio NH 3/(NH3AsH3) should exceed 0.99. We also find that the lattice mismatch stress from the Ge substrate increases the V/III sourcegas ratio required for stable growth, whereas an increase in input Ga partial pressure ratio has the opposite effect.
UR - http://www.scopus.com/inward/record.url?scp=84857993093&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84857993093&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2011.12.079
DO - 10.1016/j.jcrysgro.2011.12.079
M3 - Article
AN - SCOPUS:84857993093
VL - 343
SP - 105
EP - 109
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -