Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge

Kawano Jun, K. Yoshihiro, Ito Tomonori, Kakimoto Koichi, Koukitu Akinori

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

In this paper, we use thermodynamic analysis to determine how the nitrogen (N) ratio in the source gases affects the solid composition of coherently grown GaAs1-xNx(x∼0.03). The source gases for Ga, As, and N are trimethylgallium ((CH3)3Ga), arsine (AsH3), and ammonia (NH3), respectively. The growth occurs on a Ge substrate, and the analysis includes the stress from the substratecrystal lattice mismatch. Calculation results indicate that to have just a few percent N incorporation into the grown solid, the V/III ratio in the source gases should be several thousands and the input-gas partial-pressure ratio NH 3/(NH3AsH3) should exceed 0.99. We also find that the lattice mismatch stress from the Ge substrate increases the V/III sourcegas ratio required for stable growth, whereas an increase in input Ga partial pressure ratio has the opposite effect.

元の言語英語
ページ(範囲)105-109
ページ数5
ジャーナルJournal of Crystal Growth
343
発行部数1
DOI
出版物ステータス出版済み - 3 15 2012

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Vapor phase epitaxy
pressure ratio
Gases
Thermodynamics
vapor phases
thermodynamics
Lattice mismatch
partial pressure
gases
Partial pressure
gas pressure
ammonia
Substrates
Ammonia
nitrogen
Nitrogen
Chemical analysis
arsine

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge. / Jun, Kawano; Yoshihiro, K.; Tomonori, Ito; Koichi, Kakimoto; Akinori, Koukitu.

:: Journal of Crystal Growth, 巻 343, 番号 1, 15.03.2012, p. 105-109.

研究成果: ジャーナルへの寄稿記事

Jun, Kawano ; Yoshihiro, K. ; Tomonori, Ito ; Koichi, Kakimoto ; Akinori, Koukitu. / Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge. :: Journal of Crystal Growth. 2012 ; 巻 343, 番号 1. pp. 105-109.
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AU - Jun, Kawano

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AU - Akinori, Koukitu

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N2 - In this paper, we use thermodynamic analysis to determine how the nitrogen (N) ratio in the source gases affects the solid composition of coherently grown GaAs1-xNx(x∼0.03). The source gases for Ga, As, and N are trimethylgallium ((CH3)3Ga), arsine (AsH3), and ammonia (NH3), respectively. The growth occurs on a Ge substrate, and the analysis includes the stress from the substratecrystal lattice mismatch. Calculation results indicate that to have just a few percent N incorporation into the grown solid, the V/III ratio in the source gases should be several thousands and the input-gas partial-pressure ratio NH 3/(NH3AsH3) should exceed 0.99. We also find that the lattice mismatch stress from the Ge substrate increases the V/III sourcegas ratio required for stable growth, whereas an increase in input Ga partial pressure ratio has the opposite effect.

AB - In this paper, we use thermodynamic analysis to determine how the nitrogen (N) ratio in the source gases affects the solid composition of coherently grown GaAs1-xNx(x∼0.03). The source gases for Ga, As, and N are trimethylgallium ((CH3)3Ga), arsine (AsH3), and ammonia (NH3), respectively. The growth occurs on a Ge substrate, and the analysis includes the stress from the substratecrystal lattice mismatch. Calculation results indicate that to have just a few percent N incorporation into the grown solid, the V/III ratio in the source gases should be several thousands and the input-gas partial-pressure ratio NH 3/(NH3AsH3) should exceed 0.99. We also find that the lattice mismatch stress from the Ge substrate increases the V/III sourcegas ratio required for stable growth, whereas an increase in input Ga partial pressure ratio has the opposite effect.

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