We studied the thermodynamic stability of InGaAlN alloy based on calculations of enthalpy of mixing using empirical interatomic potentials. We also investigated the influence of lattice constraint from the bottom layer, i.e., (0001)GaN or (0001)InN, on thermodynamic stability of InGaAlN thin films. The results suggest that the maximum point of enthalpy of mixing shifted toward the In-rich side in the case of InGaAlN/GaN and toward the In-poor side in the case of InGaAlN/InN compared with that of bulk In1-x-yGa xAlyN at x = 0, y = 0.5. This implies that lattice constraint from the bottom layer has a significant influence on thermodynamic stability of thin films.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版ステータス||出版済み - 7 31 2006|
|イベント||6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, ドイツ|
継続期間: 8 28 2005 → 9 2 2005
All Science Journal Classification (ASJC) codes