Thermodynamic stability of in1-x-yGaxAlyN on GaN and InN

Yoshihiro Kangawa, Koichi Kakimoto, Tomonori Ito, Akinori Koukitu

研究成果: Contribution to journalConference article査読

3 被引用数 (Scopus)

抄録

We studied the thermodynamic stability of InGaAlN alloy based on calculations of enthalpy of mixing using empirical interatomic potentials. We also investigated the influence of lattice constraint from the bottom layer, i.e., (0001)GaN or (0001)InN, on thermodynamic stability of InGaAlN thin films. The results suggest that the maximum point of enthalpy of mixing shifted toward the In-rich side in the case of InGaAlN/GaN and toward the In-poor side in the case of InGaAlN/InN compared with that of bulk In1-x-yGa xAlyN at x = 0, y = 0.5. This implies that lattice constraint from the bottom layer has a significant influence on thermodynamic stability of thin films.

本文言語英語
ページ(範囲)1700-1703
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
3
DOI
出版ステータス出版済み - 7 31 2006
イベント6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, ドイツ
継続期間: 8 28 20059 2 2005

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学

フィンガープリント

「Thermodynamic stability of in<sub>1-x-y</sub>Ga<sub>x</sub>Al<sub>y</sub>N on GaN and InN」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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