Thermodynamic stability of in1-x-yGaxAlyN on GaN and InN

Yoshihiro Kangawa; Koichi Kakimoto; Tomonori Ito; Akinori Koukitu

doi:10.1002/pssc.200565106

Thermodynamic stability of in_1-x-yGa_xAl_yN on GaN and InN

Yoshihiro Kangawa, Koichi Kakimoto, Tomonori Ito, Akinori Koukitu

新エネルギー力学部門

研究成果: ジャーナルへの寄稿 › 会議記事 › 査読

3 被引用数 (Scopus)

抄録

We studied the thermodynamic stability of InGaAlN alloy based on calculations of enthalpy of mixing using empirical interatomic potentials. We also investigated the influence of lattice constraint from the bottom layer, i.e., (0001)GaN or (0001)InN, on thermodynamic stability of InGaAlN thin films. The results suggest that the maximum point of enthalpy of mixing shifted toward the In-rich side in the case of InGaAlN/GaN and toward the In-poor side in the case of InGaAlN/InN compared with that of bulk In_1-x-yGa _xAl_yN at x = 0, y = 0.5. This implies that lattice constraint from the bottom layer has a significant influence on thermodynamic stability of thin films.

本文言語	英語
ページ（範囲）	1700-1703
ページ数	4
ジャーナル	Physica Status Solidi (C) Current Topics in Solid State Physics
巻	3
DOI	https://doi.org/10.1002/pssc.200565106
出版ステータス	出版済み - 7月 31 2006
イベント	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, ドイツ継続期間: 8月 28 2005 → 9月 2 2005

!!!All Science Journal Classification (ASJC) codes

凝縮系物理学

文献へのアクセス

10.1002/pssc.200565106

他のファイルとリンク

引用スタイル

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title = "Thermodynamic stability of in1-x-yGaxAlyN on GaN and InN",

abstract = "We studied the thermodynamic stability of InGaAlN alloy based on calculations of enthalpy of mixing using empirical interatomic potentials. We also investigated the influence of lattice constraint from the bottom layer, i.e., (0001)GaN or (0001)InN, on thermodynamic stability of InGaAlN thin films. The results suggest that the maximum point of enthalpy of mixing shifted toward the In-rich side in the case of InGaAlN/GaN and toward the In-poor side in the case of InGaAlN/InN compared with that of bulk In1-x-yGa xAlyN at x = 0, y = 0.5. This implies that lattice constraint from the bottom layer has a significant influence on thermodynamic stability of thin films.",

author = "Yoshihiro Kangawa and Koichi Kakimoto and Tomonori Ito and Akinori Koukitu",

year = "2006",

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journal = "Physica Status Solidi C: Conferences",

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note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

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T1 - Thermodynamic stability of in1-x-yGaxAlyN on GaN and InN

AU - Kangawa, Yoshihiro

AU - Kakimoto, Koichi

AU - Ito, Tomonori

AU - Koukitu, Akinori

PY - 2006/7/31

Y1 - 2006/7/31

N2 - We studied the thermodynamic stability of InGaAlN alloy based on calculations of enthalpy of mixing using empirical interatomic potentials. We also investigated the influence of lattice constraint from the bottom layer, i.e., (0001)GaN or (0001)InN, on thermodynamic stability of InGaAlN thin films. The results suggest that the maximum point of enthalpy of mixing shifted toward the In-rich side in the case of InGaAlN/GaN and toward the In-poor side in the case of InGaAlN/InN compared with that of bulk In1-x-yGa xAlyN at x = 0, y = 0.5. This implies that lattice constraint from the bottom layer has a significant influence on thermodynamic stability of thin films.

AB - We studied the thermodynamic stability of InGaAlN alloy based on calculations of enthalpy of mixing using empirical interatomic potentials. We also investigated the influence of lattice constraint from the bottom layer, i.e., (0001)GaN or (0001)InN, on thermodynamic stability of InGaAlN thin films. The results suggest that the maximum point of enthalpy of mixing shifted toward the In-rich side in the case of InGaAlN/GaN and toward the In-poor side in the case of InGaAlN/InN compared with that of bulk In1-x-yGa xAlyN at x = 0, y = 0.5. This implies that lattice constraint from the bottom layer has a significant influence on thermodynamic stability of thin films.

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