Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE

Yoshihiro Kangawa, Tomonori Ito, Yoshinao Kumagai, Akinori Koukitu

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

Thermodynamic analyses were carried out to understand influence of lattice constraint from GaN and InN substrates on relationship between solid composition x of In x Ga 1-x N films and input mole ratio R In (=P In 0 /(P In 0 +P Ga 0 ) where P i 0 is the input partial pressure of element i) during molecular beam epitaxy. The calculated results suggest that compositional unstable region is found at small R In region for InGaN on InN while that for InGaN on GaN can be seen at large R In region at higher temperatures. This implies that InN-rich thin films are possible to form on InN substrate though it is difficult to form on GaN substrate.

本文言語英語
ページ(範囲)453-457
ページ数5
ジャーナルApplied Surface Science
216
1-4 SPEC.
DOI
出版ステータス出版済み - 6 30 2003
外部発表はい

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

フィンガープリント

「Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル