Thermodynamic understanding and analytical modeling of interfacial SiO2 scavenging in HfO2 gate stacks on Si, SiGe, and SiC

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

This work thermodynamically and experimentally generalizes the interfacial SiO2 scavenging in HfO2 gate stacks from on Si to on other channel materials including SiGe and SiC and proposes a generalized formulation for this process. By paying attention to the Si chemical potential in the SiO2 interfacial layer (SiO2-IL) significantly affected by the substrate, it clarifies that Si in the substrate is indispensable to trigger the scavenging process. Thanks to this understanding, we demonstrate that the scavenging is extendable to next generation of channel materials containing Si such as SiGe and SiC with well-controlled high-k gate stacks. In addition, via formulating the diffusion-reaction-diffusion kinetics, an analytical relation like the Deal-Grove model is obtained for SiO2-IL scavenging in high-k gate stacks.

本文言語英語
論文番号142903
ジャーナルApplied Physics Letters
110
14
DOI
出版ステータス出版済み - 4 3 2017
外部発表はい

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Thermodynamic understanding and analytical modeling of interfacial SiO<sub>2</sub> scavenging in HfO<sub>2</sub> gate stacks on Si, SiGe, and SiC」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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