抄録
This paper presents the structure and fabrication process of a thermoelectric infrared sensor that provides high responsivity and a low cost potential. The processes for obtaining a precisely patterned Au-black infrared absorbing layer and reducing the internal stress of the Si3N4„ layer deposited by LP-CVD achieve both high responsivity and an excellent time constant A prototype sensor, having external dimensions of 160 µmx 160 µm and six pairs of thermopiles, achieved responsivity of 2100 VAV and a time constant of 25 msec at a pressure of 7.33 Pa. This performance is suitable for automotive appEcations.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 325-330 |
| ページ数 | 6 |
| ジャーナル | IEEJ Transactions on Sensors and Micromachines |
| 巻 | 121 |
| 発行部数 | 6 |
| DOI | |
| 出版物ステータス | 出版済み - 1 1 2001 |
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All Science Journal Classification (ASJC) codes
- Mechanical Engineering
- Electrical and Electronic Engineering
これを引用
Thermoelectric Infrared Sensors with High Responsivity for Automotive Applications. / Hirota, masaki; Satou, Fuminori; Morita, Shinichi.
：: IEEJ Transactions on Sensors and Micromachines, 巻 121, 番号 6, 01.01.2001, p. 325-330.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Thermoelectric Infrared Sensors with High Responsivity for Automotive Applications
AU - Hirota, masaki
AU - Satou, Fuminori
AU - Morita, Shinichi
PY - 2001/1/1
Y1 - 2001/1/1
N2 - This paper presents the structure and fabrication process of a thermoelectric infrared sensor that provides high responsivity and a low cost potential. The processes for obtaining a precisely patterned Au-black infrared absorbing layer and reducing the internal stress of the Si3N4„ layer deposited by LP-CVD achieve both high responsivity and an excellent time constant A prototype sensor, having external dimensions of 160 µmx 160 µm and six pairs of thermopiles, achieved responsivity of 2100 VAV and a time constant of 25 msec at a pressure of 7.33 Pa. This performance is suitable for automotive appEcations.
AB - This paper presents the structure and fabrication process of a thermoelectric infrared sensor that provides high responsivity and a low cost potential. The processes for obtaining a precisely patterned Au-black infrared absorbing layer and reducing the internal stress of the Si3N4„ layer deposited by LP-CVD achieve both high responsivity and an excellent time constant A prototype sensor, having external dimensions of 160 µmx 160 µm and six pairs of thermopiles, achieved responsivity of 2100 VAV and a time constant of 25 msec at a pressure of 7.33 Pa. This performance is suitable for automotive appEcations.
UR - http://www.scopus.com/inward/record.url?scp=85010162908&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85010162908&partnerID=8YFLogxK
U2 - 10.1541/ieejsmas.121.325
DO - 10.1541/ieejsmas.121.325
M3 - Article
AN - SCOPUS:85010162908
VL - 121
SP - 325
EP - 330
JO - IEEJ Transactions on Sensors and Micromachines
JF - IEEJ Transactions on Sensors and Micromachines
SN - 1341-8939
IS - 6
ER -