TY - JOUR
T1 - Thermoelectric properties and structural instability of type-I clathrate Ba 8Ga 16Sn 30 at high temperatures
AU - Saiga, Y.
AU - Suekuni, K.
AU - Du, B.
AU - Takabatake, T.
N1 - Funding Information:
We thank Y. Kono for the measurements of thermal diffusivity and specific heat for type-I Ba 8 Ga 16 Sn 30 . This work was supported by NEDO Grant no. 09002139-0 and Grant-in-Aid for Scientific Research from MEXT of Japan, Grant nos. 19051011 and 20102004 .
PY - 2012/10
Y1 - 2012/10
N2 - Type-I clathrate Ba 8Ga 16Sn 30 is known as a typical example showing glass-like behavior in the thermal conductivity at low temperatures. We report on thermoelectric properties above room temperature for the p- and n-type single crystals which were grown from Ga-Sn double flux and Sn single flux, respectively. The measurements of electrical resistivity showed hysteretic behaviors when the sample was heated to 600 K. Powder X-ray diffraction analysis indicated that the type-I structure changed to the type-VIII after the sample was heated to 600 K. By using the data of Seebeck coefficient, electrical resistivity, and thermal conductivity, we estimated the dimensionless figure of merit ZT for the type-I Ba 8Ga 16Sn 30. For the p- and n-type samples, the values of ZT reach 0.58 and 0.50 at around 450 K, respectively, which values are approximately half of those for the type-VIII counterparts.
AB - Type-I clathrate Ba 8Ga 16Sn 30 is known as a typical example showing glass-like behavior in the thermal conductivity at low temperatures. We report on thermoelectric properties above room temperature for the p- and n-type single crystals which were grown from Ga-Sn double flux and Sn single flux, respectively. The measurements of electrical resistivity showed hysteretic behaviors when the sample was heated to 600 K. Powder X-ray diffraction analysis indicated that the type-I structure changed to the type-VIII after the sample was heated to 600 K. By using the data of Seebeck coefficient, electrical resistivity, and thermal conductivity, we estimated the dimensionless figure of merit ZT for the type-I Ba 8Ga 16Sn 30. For the p- and n-type samples, the values of ZT reach 0.58 and 0.50 at around 450 K, respectively, which values are approximately half of those for the type-VIII counterparts.
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U2 - 10.1016/j.ssc.2012.06.027
DO - 10.1016/j.ssc.2012.06.027
M3 - Article
AN - SCOPUS:84865777933
VL - 152
SP - 1902
EP - 1905
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 20
ER -