TY - GEN
T1 - Thermoelectric properties of Al-doped ZnO sintered with nanosized void forming agents
AU - Ohtaki, M.
AU - Maehara, S.
AU - Shige, S.
N1 - Publisher Copyright:
© 2003 IEEE.
PY - 2003
Y1 - 2003
N2 - Reported are the electrical and thermal transport properties of Al-doped zinc oxide sintered in the presence of void forming agents (VFA) such as small carbon or organic polymer particles of several hundreds nanometers in size. Nanosized cavities (nanovoids) thus formed within dense oxide matrices lead to a marked enhancement in the thermopower, showing a large negative maxima at the temperature range around 400-600°C. On the other hand, the formation of the nanovoids scarcely influences the electrical conductivity, if the size of VFA is sufficiently small. Although the reduction of the thermal conductivity is also fairly small, the enhanced thermopower coupled with the virtually unchanged electrical conductivity results in a considerable improvement in the power factor with the maximum value of 40×10-4 W/mK2, being twice as large as that of the completely dense sample without addition of VFA. The ZT value thereby exceeds 0.4, and the operation temperature range markedly expands toward the lower temperatures. Different behavior of the scattering cross sections for electrons and phonons will be discussed.
AB - Reported are the electrical and thermal transport properties of Al-doped zinc oxide sintered in the presence of void forming agents (VFA) such as small carbon or organic polymer particles of several hundreds nanometers in size. Nanosized cavities (nanovoids) thus formed within dense oxide matrices lead to a marked enhancement in the thermopower, showing a large negative maxima at the temperature range around 400-600°C. On the other hand, the formation of the nanovoids scarcely influences the electrical conductivity, if the size of VFA is sufficiently small. Although the reduction of the thermal conductivity is also fairly small, the enhanced thermopower coupled with the virtually unchanged electrical conductivity results in a considerable improvement in the power factor with the maximum value of 40×10-4 W/mK2, being twice as large as that of the completely dense sample without addition of VFA. The ZT value thereby exceeds 0.4, and the operation temperature range markedly expands toward the lower temperatures. Different behavior of the scattering cross sections for electrons and phonons will be discussed.
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U2 - 10.1109/ICT.2003.1287476
DO - 10.1109/ICT.2003.1287476
M3 - Conference contribution
AN - SCOPUS:84946047288
T3 - International Conference on Thermoelectrics, ICT, Proceedings
SP - 171
EP - 174
BT - Proceedings ICT 2003 - 22nd International Conference on Thermoelectrics
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 22nd International Conference on Thermoelectrics, ICT 2003
Y2 - 17 August 2003 through 21 August 2003
ER -