Thermoelectric properties of In- and Ga-doped spark plasma sintered ZnO ceramics

Ahrong Jeong, Koichiro Suekuni, Michitaka Ohtaki, Byung Koog Jang

研究成果: Contribution to journalArticle査読

抄録

In this study, indium (In)- and gallium (Ga)-doped zinc oxide (ZnO) ceramics, [Zn(1−x−y)GaxIny]O (x = 0, 0.02; y = 0, 0.005, 0.01, 0.02), were fabricated via spark plasma sintering (SPS) at 1423 K. Crystal structure and microstructural analyses were conducted to confirm the solubility of the dopants and understand the correlations between the crystallographic phases and the various compositions. It was confirmed that the solubility of Ga (x = 0.02; y = 0.005) was promoted by doping with In and Ga, and the highest power factor of 0.99 mW K−2 m−1 was acquired at 1046 K. Furthermore, the thermal conductivity at 340–530 K was reduced by doping with In and Ga.

本文言語英語
ジャーナルCeramics International
DOI
出版ステータス受理済み/印刷中 - 2021

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • プロセス化学およびプロセス工学
  • 表面、皮膜および薄膜
  • 材料化学

フィンガープリント

「Thermoelectric properties of In- and Ga-doped spark plasma sintered ZnO ceramics」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル