Thermoelectric properties of Mo-doped bulk In2O3 and prediction of its maximum ZT

Wojciech Klich, Michitaka Ohtaki

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

In a search for new thermoelectric materials, indium oxide (In2O3) was selected as a candidate for high-temperature thermoelectric oxide materials due to its intrinsically low thermal conductivity (<2 W/mK) and ZT values around 0.05. However, low electrical conductivity is a factor limiting the thermoelectric performance of this oxide, and was addressed in this study by Mo doping. It was found that Mo is soluble in In2O3 but forms secondary phases at a fraction near x = 0.06 and higher. Mo was found to be unsuitable for heavy n-type doping necessary to improve the thermoelectric performance of the oxide to the desired level (ZT = 1). However, the experimental data enabled us to analyze the electrical conductivity behavior and the Seebeck coefficient of doped In2O3 with different carrier concentrations, predicting a theoretically achievable maximum power factor value of 1.77 × 10−3 W/mK2 at an optimum carrier concentration. This estimation predicts the highest ZT value of 0.75 at 1073 K, assuming the lattice thermal conductivity value remaining at an amorphous level.

本文言語英語
ページ(範囲)18116-18121
ページ数6
ジャーナルCeramics International
47
13
DOI
出版ステータス出版済み - 7 1 2021

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • プロセス化学およびプロセス工学
  • 表面、皮膜および薄膜
  • 材料化学

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