Thermoelectric properties of ZnO doped with the group 13 elements

Toshiki Tsubota; Michitaka Ohtaki; Koichi Eguchi; Hiromichi Arai

Thermoelectric properties of ZnO doped with the group 13 elements

Toshiki Tsubota, Michitaka Ohtaki, Koichi Eguchi, Hiromichi Arai

研究成果: 会議への寄与タイプ › 学会誌 › 査読

抄録

Investigation on thermoelectric properties of ZnO doped with the group 13 elements revealed that addition of M ₂ O ₃ (M = Al, Ga, In) to ZnO all increased the electrical conductivity significantly, whereas the absolute values of the Seebeck coefficient moderately decreased. The increase in the electrical conductivity was smaller for the dopant with the heavier element, being in good agreement with a decrease in the carrier mobility. However, the thermal conductivity was also suppressed by Ga and In doping, particularly at the lower temperature region. Even with the smaller power factor values, the figure of merit of (Zn _0.98 M _0.02 )O (M = Ga or In) was equal to that of the Al-doped one up to ca. 600 °C, owing to the suppression of the thermal conductivity.

本文言語	英語
ページ	240-243
ページ数	4
出版ステータス	出版済み - 12月 1 1997
イベント	Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97 - Dresden, Ger 継続期間: 8月 26 1997 → 8月 29 1997

その他

その他	Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97
City	Dresden, Ger
Period	8/26/97 → 8/29/97

!!!All Science Journal Classification (ASJC) codes

工学（全般）

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title = "Thermoelectric properties of ZnO doped with the group 13 elements",

abstract = " Investigation on thermoelectric properties of ZnO doped with the group 13 elements revealed that addition of M 2 O 3 (M = Al, Ga, In) to ZnO all increased the electrical conductivity significantly, whereas the absolute values of the Seebeck coefficient moderately decreased. The increase in the electrical conductivity was smaller for the dopant with the heavier element, being in good agreement with a decrease in the carrier mobility. However, the thermal conductivity was also suppressed by Ga and In doping, particularly at the lower temperature region. Even with the smaller power factor values, the figure of merit of (Zn 0.98 M 0.02 )O (M = Ga or In) was equal to that of the Al-doped one up to ca. 600 °C, owing to the suppression of the thermal conductivity. ",

author = "Toshiki Tsubota and Michitaka Ohtaki and Koichi Eguchi and Hiromichi Arai",

year = "1997",

month = dec,

day = "1",

language = "English",

pages = "240--243",

note = "Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97 ; Conference date: 26-08-1997 Through 29-08-1997",

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T1 - Thermoelectric properties of ZnO doped with the group 13 elements

AU - Tsubota, Toshiki

AU - Ohtaki, Michitaka

AU - Eguchi, Koichi

AU - Arai, Hiromichi

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Investigation on thermoelectric properties of ZnO doped with the group 13 elements revealed that addition of M 2 O 3 (M = Al, Ga, In) to ZnO all increased the electrical conductivity significantly, whereas the absolute values of the Seebeck coefficient moderately decreased. The increase in the electrical conductivity was smaller for the dopant with the heavier element, being in good agreement with a decrease in the carrier mobility. However, the thermal conductivity was also suppressed by Ga and In doping, particularly at the lower temperature region. Even with the smaller power factor values, the figure of merit of (Zn 0.98 M 0.02 )O (M = Ga or In) was equal to that of the Al-doped one up to ca. 600 °C, owing to the suppression of the thermal conductivity.

AB - Investigation on thermoelectric properties of ZnO doped with the group 13 elements revealed that addition of M 2 O 3 (M = Al, Ga, In) to ZnO all increased the electrical conductivity significantly, whereas the absolute values of the Seebeck coefficient moderately decreased. The increase in the electrical conductivity was smaller for the dopant with the heavier element, being in good agreement with a decrease in the carrier mobility. However, the thermal conductivity was also suppressed by Ga and In doping, particularly at the lower temperature region. Even with the smaller power factor values, the figure of merit of (Zn 0.98 M 0.02 )O (M = Ga or In) was equal to that of the Al-doped one up to ca. 600 °C, owing to the suppression of the thermal conductivity.

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M3 - Paper

AN - SCOPUS:0031389051

SP - 240

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T2 - Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97

Y2 - 26 August 1997 through 29 August 1997

ER -

Thermoelectric properties of ZnO doped with the group 13 elements

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