Thick and large area PIN diodes for hard X-ray astronomy

N. Ota, T. Murakami, M. Sugizaki, M. Kaneda, T. Tamura, H. Ozawa, T. Kamae, K. Makishima, T. Takahashi, M. Tashiro, Y. Fukazawa, J. Kataoka, K. Yamaoka, S. Kubo, C. Tanihata, Y. Uchiyama, K. Matsuzaki, N. Iyomoto, M. Kokubun, T. NakazawaA. Kubota, T. Mizuno, Y. Matsumoto, N. Isobe, Y. Terada, M. Sugiho, T. Onishi, H. Kubo, H. Ikeda, M. Nomachi, T. Ohsugi, M. Muramatsu, H. Akahori

研究成果: Contribution to journalConference article査読

14 被引用数 (Scopus)

抄録

Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

本文言語英語
ページ(範囲)291-296
ページ数6
ジャーナルNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
436
1-2
DOI
出版ステータス出版済み - 10 21 1999
外部発表はい
イベントProceedings of the 1998 7th International Conference on Solid State Detectors - Nara, Jpn
継続期間: 12 4 199812 6 1998

All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 器械工学

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