Thickness dependence of dielectric properties in bismuth layer-structured dielectrics

Kenji Takahashi, Muneyasu Suzuki, Takashi Kojima, Takayuki Watanabe, Yukio Sakashita, Kazumi Kato, Osami Sakata, Kazushi Sumitani, Hiroshi Funakubo

研究成果: Contribution to journalArticle査読

44 被引用数 (Scopus)

抄録

c-axis-oriented epitaxial SrBi4Ti4O15 and CaBi4Ti4O15 films having natural superlattice structure were grown on (001)cSrRuO3||(001)SrTiO 3 substrates by metal organic chemical vapor deposition. SrBi 4Ti4O15 films suffer no degradation with a dielectric constant of 200 down to a film thickness of 15 nm, which corresponds to four unit cells. Temperature coefficients of capacitance were low enough despite their high dielectric constant. They exhibited stable capacitance and superior insulating properties against applied electric field, irrespective of film thickness. These results open the door to designable size-effect-free materials with high dielectric constant having bias- and temperature-independent characteristics together with superior electrical insulation for high-density capacitor applications.

本文言語英語
論文番号082901
ジャーナルApplied Physics Letters
89
8
DOI
出版ステータス出版済み - 2006
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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