Thickness dependent solid-phase crystallization of amorphous GeSn on insulating substrates at low temperatures (≤250°C)

Ryo Matsumura, Masaya Sasaki, Hironori Chikita, Taizoh Sadoh, Masanobu Miyao

研究成果: ジャーナルへの寄稿学術誌査読

6 被引用数 (Scopus)

抄録

Low-temperature (≤250°C) solid-phase crystallization of amorphous-GeSn films (Sn-concentration: 20%-30%, thickness: 30-100 nm) on insulating-substrates are investigated. As a result, we have realized high growth-rate (∼13 μm/h) for samples (film-thickness: 100 nm, initial Sn-concentration: 30%) at surprisingly low-temperature (150°C), which is very useful to realize flexible thin-film transistors. During this study, we encountered interesting phenomena that growth rates significantly decrease with decreasing filmthickness. In addition, substitutional Sn-concentrations in grown layers increased with decreasing film thickness. These phenomena are attributed to change in bond arrangement processes caused by interface. This technique is expected to facilitate next generation flexible thin-film transistors.

本文言語英語
ページ(範囲)P95-P97
ジャーナルECS Solid State Letters
4
12
DOI
出版ステータス出版済み - 2015

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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