The complexity of a-/c-axis oriented growth of YBa2Cu3Ox thin films is reviewed from the viewpoint of controlling a-axis preferred thin film growth. Perfectly c-axis in-plane-aligned a-axis oriented YBa2Cu3Ox thin films, or "pure" a-axis oriented films, can be grown on the (100) face of tetragonal K2NiF4-type substrates by template growth process. A new growth mechanism called atomic graphoepitaxy is presented as a growth model. Transmission electron microscopy reveals that the films on a (100) SrLaGaO4 substrate consist of domains surrounded by anti-phase and stacking-fault boundaries. This domain formation can be well explained by substrate surface irregularities inherent in the SrLaGaO4 crystal. The formation of defects in microstructures in "pure" a-axis oriented YBa2Cu3Ox thin films is also modeled based on our atomic graphoepitaxial growth model.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)