Thin film crystallinity and substrate materials in atomic graphoepitaxy of YBa2Cu3Ox

S. Miyazawa, M. Mukaida, M. Sasaura

研究成果: ジャーナルへの寄稿記事

抜粋

The complexity of a-/c-axis oriented growth of YBa2Cu3Ox thin films is reviewed from the viewpoint of controlling a-axis preferred thin film growth. Perfectly c-axis in-plane-aligned a-axis oriented YBa2Cu3Ox thin films, or "pure" a-axis oriented films, can be grown on the (100) face of tetragonal K2NiF4-type substrates by template growth process. A new growth mechanism called atomic graphoepitaxy is presented as a growth model. Transmission electron microscopy reveals that the films on a (100) SrLaGaO4 substrate consist of domains surrounded by anti-phase and stacking-fault boundaries. This domain formation can be well explained by substrate surface irregularities inherent in the SrLaGaO4 crystal. The formation of defects in microstructures in "pure" a-axis oriented YBa2Cu3Ox thin films is also modeled based on our atomic graphoepitaxial growth model.

元の言語英語
ページ(範囲)85-96
ページ数12
ジャーナルActa Physica Polonica A
92
発行部数1
DOI
出版物ステータス出版済み - 1 1 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

フィンガープリント Thin film crystallinity and substrate materials in atomic graphoepitaxy of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>x</sub>' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

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