Thin-layer ablation of metals and silicon by femtosecond laser pulses for application to surface analysis

Min Kyu Kim, Takayuki Takao, Yuji Oki, Mitsuo Maeda

研究成果: Contribution to journalArticle査読

33 被引用数 (Scopus)

抄録

For the purpose of thin-layer surface analysis, comparison of laser ablation by 24 ns ArF laser pulses at 193 nm and that by 150 fs Ti:sapphire laser pulses at 780 nm for samples ranging from metals to semiconductors is reported. In contrast to nanosecond laser pulses, the ablation threshold for femtosecond laser pulses could be reduced significantly. In particular, the threshold for a Si sample was reduced to about one order of magnitude, and an ablation rate of 0.48 nm/shot was obtained at 5% above the threshold fluence. The root-mean-square (RMS) growth rate in the roughness of the ablated surface was 0.05 nm/shot. These results show the advantages of femtosecond laser ablation for trace element analysis of a wide range of materials, coupled with laser-induced fluorescence (LIF) spectroscopy.

本文言語英語
ページ(範囲)6277-6280
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
39
11
DOI
出版ステータス出版済み - 11 2000

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Thin-layer ablation of metals and silicon by femtosecond laser pulses for application to surface analysis」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル