Three-dimensional modeling of basal plane dislocations in 4H-SiC single crystals grown by the physical vapor transport method

Bing Gao, Koichi Kakimoto

研究成果: Contribution to journalArticle査読

21 被引用数 (Scopus)

抄録

To effectively reduce basal plane dislocations (BPDs) during SiC physical vapor transport growth, a three-dimensional model for tracking the multiplication of BPDs has been developed. The distribution of BPDs inside global crystals has been shown. The effects of the convexity of the growth surface and the cooling rate have been analyzed. The results show that the convexity of the growth surface is unfavorable and can cause a large multiplication of BPDs when the crystal grows. Fast cooling during the cooling process is beneficial for the reduction of BPDs because fast cooling can result in a smaller radial flux at the high-temperature region. In addition, fast cooling can reduce the generation of stacking faults during the cooling process. Therefore, to reduce BPDs and stacking faults, it is better to maintain or reduce the convexity of the growth surface and increase the cooling rate during the cooling process.

本文言語英語
ページ(範囲)1272-1278
ページ数7
ジャーナルCrystal Growth and Design
14
3
DOI
出版ステータス出版済み - 3 5 2014

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学

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