Time-of-flight measurement of longitudinal electron transport in amorphous semiconductor multilayers

Reiji Hattori, T. Enomoto, J. Shirafuji

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

抄録

Longitudinal electron transport in a-Si:H/a-SiNx:H multilayers has been measured by time-of-flight method. The mechanism involved is explained in terms of tunnel hopping of electrons confined in well layers to neighbors through the barrier layers and multiple trapping process in the well layers. Based on this model, the energy distribution of deep lying tail states in the well layers is estimated.

元の言語英語
ページ(範囲)711-713
ページ数3
ジャーナルJournal of Non-Crystalline Solids
114
発行部数PART 2
DOI
出版物ステータス出版済み - 12 2 1989
外部発表Yes

Fingerprint

Amorphous semiconductors
amorphous semiconductors
Tunnels
Multilayers
Electrons
electrons
barrier layers
tunnels
energy distribution
trapping
Electron Transport

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

これを引用

Time-of-flight measurement of longitudinal electron transport in amorphous semiconductor multilayers. / Hattori, Reiji; Enomoto, T.; Shirafuji, J.

:: Journal of Non-Crystalline Solids, 巻 114, 番号 PART 2, 02.12.1989, p. 711-713.

研究成果: ジャーナルへの寄稿記事

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