Top-down approach to align single-walled carbon nanotubes on silicon substrate

Carlo M. Orofeo, Hiroki Ago, Naoki Yoshihara, Masaharu Tsuji

    研究成果: ジャーナルへの寄稿学術誌査読

    20 被引用数 (Scopus)

    抄録

    We report controlled horizontal alignment of single-walled carbon nanotubes (SWNTs) directly grown on trenched SiO2 /Si substrate. The nanotubes were found to align along the trenches, which were created via electron beam lithography followed by reactive ion etching. From the experimental observations, the alignment mechanism was proposed. Furthermore, field-effect transistors fabricated from these substrates showed acceptable mobility and on/off ratio as high as 104. The method offers the possibility of large-scale integrated SWNT electronics for mass production.

    本文言語英語
    論文番号053113
    ジャーナルApplied Physics Letters
    94
    5
    DOI
    出版ステータス出版済み - 2009

    !!!All Science Journal Classification (ASJC) codes

    • 物理学および天文学(その他)

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