We report controlled horizontal alignment of single-walled carbon nanotubes (SWNTs) directly grown on trenched SiO2 /Si substrate. The nanotubes were found to align along the trenches, which were created via electron beam lithography followed by reactive ion etching. From the experimental observations, the alignment mechanism was proposed. Furthermore, field-effect transistors fabricated from these substrates showed acceptable mobility and on/off ratio as high as 104. The method offers the possibility of large-scale integrated SWNT electronics for mass production.
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