TY - JOUR
T1 - Toward air-stable field-effect transistors with a tin iodide-based hybrid perovskite semiconductor
AU - Matsushima, Toshinori
AU - Terakawa, Shinobu
AU - Leyden, Matthew R.
AU - Fujihara, Takashi
AU - Qin, Chuanjiang
AU - Adachi, Chihaya
N1 - Funding Information:
This work was supported by the Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project (JST ERATO Grant No. JPMJER1305), by the International Institute for Carbon Neutral Energy Research (WPI-I2CNER) sponsored by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), by JSPS KAKENHI (Grant Nos. JP15K14149 and JP16H04192), and by The Canon Foundation.
Publisher Copyright:
© 2019 Author(s).
PY - 2019/6/21
Y1 - 2019/6/21
N2 - The tin iodide-based hybrid perovskite (C6H5C2H4NH3)2SnI4 [(PEA)2SnI4] is promising as the semiconductor in field-effect transistors (FETs) because of its easy film processability and high carrier mobility. However, the stability of (PEA)2SnI4 FETs in air remains a significant issue. In this study, we show that the source of this degradation is oxygen. We observed that the structure of (PEA)2SnI4 degraded in the presence of oxygen, along with the formation of gaps between grains. With the aim of suppressing the oxygen-induced degradation, we optimized (PEA)2SnI4 spin-coating conditions to increase the grain size and simply encapsulated a (PEA)2SnI4 semiconductor with the fluorine-based polymer CYTOP. Adopting these methods led to the greatly improved stability of FET performance in air. We propose that oxygen had reduced penetration into (PEA)2SnI4 films with larger grains. The drain current of optimized FETs remained almost unchanged over 5 h of operation, which is in contrast to the control device that decayed within 1 h.
AB - The tin iodide-based hybrid perovskite (C6H5C2H4NH3)2SnI4 [(PEA)2SnI4] is promising as the semiconductor in field-effect transistors (FETs) because of its easy film processability and high carrier mobility. However, the stability of (PEA)2SnI4 FETs in air remains a significant issue. In this study, we show that the source of this degradation is oxygen. We observed that the structure of (PEA)2SnI4 degraded in the presence of oxygen, along with the formation of gaps between grains. With the aim of suppressing the oxygen-induced degradation, we optimized (PEA)2SnI4 spin-coating conditions to increase the grain size and simply encapsulated a (PEA)2SnI4 semiconductor with the fluorine-based polymer CYTOP. Adopting these methods led to the greatly improved stability of FET performance in air. We propose that oxygen had reduced penetration into (PEA)2SnI4 films with larger grains. The drain current of optimized FETs remained almost unchanged over 5 h of operation, which is in contrast to the control device that decayed within 1 h.
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U2 - 10.1063/1.5097433
DO - 10.1063/1.5097433
M3 - Article
AN - SCOPUS:85067894117
VL - 125
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 23
M1 - 235501
ER -