Toward the understanding of annealing effects on (GaIn)2O3 films

Fabi Zhang, Hideki Jan, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Takashi Nagaoka, Makoto Arita, Qixin Guo

研究成果: Contribution to journalArticle

9 引用 (Scopus)

抜粋

(GaIn)2O3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N2, vacuum, Ar, O2) and temperatures (700-1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn)2O3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface.

元の言語英語
ページ(範囲)1-6
ページ数6
ジャーナルThin Solid Films
578
DOI
出版物ステータス出版済み - 3 2 2015

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

フィンガープリント Toward the understanding of annealing effects on (GaIn)<sub>2</sub>O<sub>3</sub> films' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Zhang, F., Jan, H., Saito, K., Tanaka, T., Nishio, M., Nagaoka, T., Arita, M., & Guo, Q. (2015). Toward the understanding of annealing effects on (GaIn)2O3 films. Thin Solid Films, 578, 1-6. https://doi.org/10.1016/j.tsf.2015.02.003