Tracing the goss orientation during deformation and annealing of an FeSi single crystal

A Goss-oriented single crystal was cold rolled up to 89% thickness reduction, and subsequently annealed at 550°C or 850°C During deformation most of the initially Goss-oriented material rotated into the two symmetrical {111}〈112〉 orientations. In addition, Goss regions were observed related to microbands or microshear bands. Goss regions in microshear bands formed during straining, whereas Goss regions between microbands were retained from the initial Goss orientation. The recrystallisation texture for annealing temperatures of both 550°C and 850°C is characterised by a Goss texture. However, the origin of the Goss recrystallisation nuclei appeared to be different for the different annealing conditions. In the material annealed at 550°C, the Goss texture originated from the Goss regions in the microshear bands. In contrast, for an annealing temperature of 850°C, the Goss grains between the microbands are likely to form recrystallisation nuclei.