Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (1 1 1)A substrate

Hisashi Murakami, Yoshihiro Kangawa, Yoshinao Kumagai, Akinori Koukitu

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

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Engineering & Materials Science

Physics & Astronomy

Chemical Compounds