抄録
Picosecond time-resolved Transient Reflecting Grating (TRG) measurements are demonstrated for GHz ultrasonic and thermal spectroscopies of thin films and sub-surface regions of sub-μm scale. The measurements should be tools for electrochemical interface monitoring and time-resolved imaging. Some results are presented to show ion-implantation-induced surface hardening and unusual heat-diffusion behavior near a silicon surface. A model describing potential dependence of TRG responses at an electrochemical interface is proposed. An image of photoexcited carrier density is compared with a thermal image for a He-ion-implanted silicon wafer to demonstrate the time-resolved imaging.
本文言語 | 英語 |
---|---|
ページ(範囲) | 263-268 |
ページ数 | 6 |
ジャーナル | Applied Physics A Materials Science & Processing |
巻 | 61 |
号 | 3 |
DOI | |
出版ステータス | 出版済み - 9月 1 1995 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 化学 (全般)
- 材料科学(全般)