Transient reflecting grating study of ion-implanted semiconductors

A. Harata, H. Nishimura, Q. Shen, T. Tanaka, T. Sawada

研究成果: Contribution to journalConference article査読

抄録

Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 1011-1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).

本文言語英語
ページ(範囲)C7-159-162
ジャーナルJournal De Physique
4
7
DOI
出版ステータス出版済み - 1994
外部発表はい
イベントProceedings of the 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena - Guadeloupe, Fr
継続期間: 1 22 19941 25 1994

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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