Transition from a punched-out dislocation to a slip dislocation revealed by electron tomography

Masaki Tanaka, Grace S. Liu, Tomonobu Kishida, Kenji Higashida, Ian M. Robertson

研究成果: Contribution to journalArticle査読

12 被引用数 (Scopus)

抄録

Punched-out dislocations emitted from an octahedral oxide precipitate in single-crystal silicon were investigated using high-voltage electron microscopy and tomography (HVEM-tomography) to understand the mechanism of softening caused by the oxide precipitates. In the present paper, direct evidence of the transition of a punched-out prismatic dislocation loop to a slip dislocation is presented. The punched-out dislocation grows into a large matrix dislocation loop by absorption of interstitial atoms, which were produced during oxide precipitation.

本文言語英語
ページ(範囲)2292-2296
ページ数5
ジャーナルJournal of Materials Research
25
12
DOI
出版ステータス出版済み - 12 2010

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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