Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi2/Si(001) films

Masaru Itakura, Daigo Norizumi, Tomohisa Ohta, Yoshitsugu Tomokiyo, Noriyuki Kuwano

研究成果: ジャーナルへの寄稿Conference article

16 引用 (Scopus)

抄録

The crystallographic orientation relationships and the formation process of β-FeSi2/Si(001) films were investigated by transmission electron microscopy. A film produced by sputtering pure iron onto a silicon substrate at 600°C consists of α- and β-FeSi2 particles. The crystallographic relationships obtained are: (112) α∥(111)Si and (101)β∥(111) Si or (110)β∥(111)Si. The grains of α- and β-FeSi2 grown inside the substrate adopt the epitaxy to Si(111), irrespective of the surface orientation of the substrate. At 500 °C, on the contrary, there are few α-FeSi2 grains and some grains of β-FeSi2 with (100)β∥(001) Si [010]β∥[110]Si. These results demonstrate that the lower temperature and the higher Fe concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2 on/below the substrate surface.

元の言語英語
ページ(範囲)120-125
ページ数6
ジャーナルThin Solid Films
461
発行部数1
DOI
出版物ステータス出版済み - 8 2 2004
イベントProceedings of Symposium on Semiconducting Silicides - Yokohama, 日本
継続期間: 10 8 200310 13 2003

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Epitaxial growth
Electron microscopes
electron microscopes
Substrates
Silicon
epitaxy
Sputtering
Iron
sputtering
Transmission electron microscopy
iron
transmission electron microscopy
silicon
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

これを引用

Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi2/Si(001) films. / Itakura, Masaru; Norizumi, Daigo; Ohta, Tomohisa; Tomokiyo, Yoshitsugu; Kuwano, Noriyuki.

:: Thin Solid Films, 巻 461, 番号 1, 02.08.2004, p. 120-125.

研究成果: ジャーナルへの寄稿Conference article

Itakura, Masaru ; Norizumi, Daigo ; Ohta, Tomohisa ; Tomokiyo, Yoshitsugu ; Kuwano, Noriyuki. / Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi2/Si(001) films. :: Thin Solid Films. 2004 ; 巻 461, 番号 1. pp. 120-125.
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title = "Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi2/Si(001) films",
abstract = "The crystallographic orientation relationships and the formation process of β-FeSi2/Si(001) films were investigated by transmission electron microscopy. A film produced by sputtering pure iron onto a silicon substrate at 600°C consists of α- and β-FeSi2 particles. The crystallographic relationships obtained are: (112) α∥(111)Si and (101)β∥(111) Si or (110)β∥(111)Si. The grains of α- and β-FeSi2 grown inside the substrate adopt the epitaxy to Si(111), irrespective of the surface orientation of the substrate. At 500 °C, on the contrary, there are few α-FeSi2 grains and some grains of β-FeSi2 with (100)β∥(001) Si [010]β∥[110]Si. These results demonstrate that the lower temperature and the higher Fe concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2 on/below the substrate surface.",
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T1 - Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi2/Si(001) films

AU - Itakura, Masaru

AU - Norizumi, Daigo

AU - Ohta, Tomohisa

AU - Tomokiyo, Yoshitsugu

AU - Kuwano, Noriyuki

PY - 2004/8/2

Y1 - 2004/8/2

N2 - The crystallographic orientation relationships and the formation process of β-FeSi2/Si(001) films were investigated by transmission electron microscopy. A film produced by sputtering pure iron onto a silicon substrate at 600°C consists of α- and β-FeSi2 particles. The crystallographic relationships obtained are: (112) α∥(111)Si and (101)β∥(111) Si or (110)β∥(111)Si. The grains of α- and β-FeSi2 grown inside the substrate adopt the epitaxy to Si(111), irrespective of the surface orientation of the substrate. At 500 °C, on the contrary, there are few α-FeSi2 grains and some grains of β-FeSi2 with (100)β∥(001) Si [010]β∥[110]Si. These results demonstrate that the lower temperature and the higher Fe concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2 on/below the substrate surface.

AB - The crystallographic orientation relationships and the formation process of β-FeSi2/Si(001) films were investigated by transmission electron microscopy. A film produced by sputtering pure iron onto a silicon substrate at 600°C consists of α- and β-FeSi2 particles. The crystallographic relationships obtained are: (112) α∥(111)Si and (101)β∥(111) Si or (110)β∥(111)Si. The grains of α- and β-FeSi2 grown inside the substrate adopt the epitaxy to Si(111), irrespective of the surface orientation of the substrate. At 500 °C, on the contrary, there are few α-FeSi2 grains and some grains of β-FeSi2 with (100)β∥(001) Si [010]β∥[110]Si. These results demonstrate that the lower temperature and the higher Fe concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2 on/below the substrate surface.

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