A new insulating material, BaSnO3 with a relatively large mismatch to YBa2Cu3Ox is investigated as a barrier material in a superconductor/ insulator/ superconductor (SIS) structure. All c-axis oriented YBa2Cu3Ox/ BaSnO3/ YBa2Cu3Ox SIS structures are grown by an in situ sequential pulsed laser deposition technique. Transmission electron microscopy (TEM) reveals that BaSnO3 thin films cover well c-axis oriented YBa2Cu3Ox thin films. Moreover, c-axis oriented YBa2Cu3Ox thin films grow epitaxially on BaSnO3 thin films with very good wetability. The relatively large mismatch provides periodical lattice discontinuity, which is probably associated with the generation of dislocations in one third of c-axis unit of YBa2Cu3Ox thin films. This study provides guidelines for selecting insulating materials.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|号||8 PART A|
|出版ステータス||出版済み - 8 1 1998|
All Science Journal Classification (ASJC) codes